Platforms including microelectronic packages therein coupled to a chassis, where waveguides couple the microelectronic packages to each other and usable in a computing device

ABSTRACT

Embodiments may relate an electronic device that includes a first server blade and a second server blade coupled with a chassis. The first and second server blades may include respective microelectronic packages. The electronic device may further include a waveguide coupled to the first and second server blades such that their respective microelectronic packages are communicatively coupled by the waveguide. Other embodiments may be described or claimed.

CROSS REFERENCE TO RELATED APPLICATION

This application is a continuation of (and claims the benefit ofpriority under 35 U.S.C. § 120 to) U.S. patent application Ser. No.16/402,055 filed May 2, 2019, entitled “PLATFORMS INCLUDINGMICROELECTRONIC PACKAGES THEREIN COUPLED TO A CHASSIS, WHERE WAVEGUIDESCOUPLE THE MICROELECTRONIC PACKAGES TO EACH OTHER AND USABLE IN ACOMPUTING DEVICE”, which application claims priority to Greek PatentApplication No. 20190100149, filed Mar. 29, 2019, entitled “STACKEDPLATFORMS WITH WAVEGUIDE INTERCONNECTS,” now abandoned. The contents ofwhich are hereby incorporated by reference in their entirety.

BACKGROUND

Rack servers and high-performance computers may use sleds or blades thatare typically stacked in a rack or within a chassis of the computingdevice. Signaling between the different boards may occur through acombination of motherboard interconnects and cables through the chassisof the computing device, which may lead to high losses and degradationof signal quality.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 depicts an example electronic device with a plurality ofplatforms connected by a waveguide interconnect, in accordance withvarious embodiments.

FIG. 2 depicts an alternative example electronic device with a pluralityof platforms connected by a waveguide interconnect, in accordance withvarious embodiments.

FIG. 3 depicts an alternative example electronic device with a pluralityof platforms connected by a waveguide interconnect, in accordance withvarious embodiments.

FIG. 4 depicts an alternative example electronic device with a pluralityof platforms connected by a waveguide interconnect, in accordance withvarious embodiments.

FIG. 5 depicts an example technique for manufacturing an electronicdevice with a plurality of platforms connected by a waveguideinterconnect, in accordance with various embodiments.

FIG. 6 illustrates an example device that may use various embodimentsherein, in accordance with various embodiments.

DETAILED DESCRIPTION

In the following detailed description, reference is made to theaccompanying drawings which form a part hereof, wherein like numeralsdesignate like parts throughout the detailed description of thedrawings, and in which is shown by way of illustration embodiments inwhich the subject matter of the present disclosure may be practiced. Itis to be understood that other embodiments may be utilized andstructural or logical changes may be made without departing from thescope of the present disclosure. Therefore, the following detaileddescription is not to be taken in a limiting sense, and the scope ofembodiments is defined by the appended claims and their equivalents.

For the purposes of the present disclosure, the phrase “A or B” means(A), (B), or (A and B). For the purposes of the present disclosure, thephrase “A, B, or C” means (A), (B), (C), (A and B), (A and C), (B andC), or (A, B and C).

The description may use perspective-based descriptions such astop/bottom, in/out, over/under, and the like. Such descriptions aremerely used to facilitate the discussion and are not intended torestrict the application of embodiments described herein to anyparticular orientation.

The description may use the phrases “in an embodiment,” or “inembodiments,” which may each refer to one or more of the same ordifferent embodiments. Furthermore, the terms “comprising,” “including,”“having,” and the like, as used with respect to embodiments of thepresent disclosure, are synonymous.

The term “coupled with,” along with derivatives thereof, may be usedherein. “Coupled” may mean one or more of the following. “Coupled” maymean that two or more elements are in direct physical or electricalcontact. However, “coupled” may also mean that two or more elementsindirectly contact each other, but yet still cooperate or interact witheach other, and may mean that one or more other elements are coupled orconnected between the elements that are said to be coupled with eachother. The term “directly coupled” may mean that two or elements are indirect contact.

In various embodiments, the phrase “a first feature formed, deposited,or otherwise disposed on a second feature,” may mean that the firstfeature is formed, deposited, or disposed over the feature layer, and atleast a part of the first feature may be in direct contact (e.g., directphysical or electrical contact) or indirect contact (e.g., having one ormore other features between the first feature and the second feature)with at least a part of the second feature.

Various operations may be described as multiple discrete operations inturn, in a manner that is most helpful in understanding the claimedsubject matter. However, the order of description should not beconstrued as to imply that these operations are necessarily orderdependent.

Embodiments herein may be described with respect to the accompanyingFigures. Reference numerals having numbers beginning with one hundred(e.g., 125, 130, etc.) refer to FIG. 1 . Reference numerals havingnumbers beginning with two hundred (e.g., 245, 250, etc.) refer to FIG.2 . Reference numerals having numbers beginning with three hundred(e.g., 345, 350, etc.) refer to FIG. 3 . Reference numerals havingnumbers beginning with four hundred (e.g., 407, 409, etc.) refer to FIG.4 . Reference numerals having numbers beginning with five hundred (e.g.,505, 510, etc.) refer to FIG. 5 . Reference numerals having numbersbeginning with fifteen hundred (e.g., 1502, 1512, etc.) refer to FIG. 6. A collection of reference numerals may be designated with differentnumerals or letters (e.g., 105 a, 105 b,), such a collection may bereferred to herein without the numerals or letters (e.g., as “105”).Unless explicitly stated, the dimensions of the accompanying Figures areintended to be simplified illustrative examples, rather than depictionsof relative dimensions. For example, various lengths/widths/heights ofelements in the accompanying Figures may not be drawn to scale unlessindicated otherwise. Additionally, some schematic illustrations ofexample structures of various devices and assemblies described hereinmay be shown with precise right angles and straight lines, but it is tobe understood that such schematic illustrations may not reflectreal-life process limitations which may cause the features to not lookso “ideal” when any of the structures described herein are examined,e.g., using scanning electron microscopy (SEM) images or transmissionelectron microscope (TEM) images. In such images of real structures,possible processing defects could also be visible, e.g., not-perfectlystraight edges of materials, tapered vias or other openings, inadvertentrounding of corners or variations in thicknesses of different materiallayers, occasional screw, edge, or combination dislocations within thecrystalline region, and/or occasional dislocation defects of singleatoms or clusters of atoms. There may be other defects not listed herebut that are common within the field of device fabrication.

As noted above, rack scale servers or high-performance computers mayutilize a number of platforms stacked within a rack or a chassis. Theplatforms may, in various embodiments, be described as “server blades,”“blades,” “sleds,” “motherboards,” etc. For the sake of ease ofdescription, the term “platforms” will be used herein.

High-speed signaling between different platforms may occur in legacydevices through a combination of motherboard interconnects andhigh-speed cables plugged at the back of the chassis. However, thisconfiguration may provide a relatively long path for the electricalsignal to travel between platforms, which may result in high losses anddegradation of the signal quality. In addition, the layout of theplatforms may become very complex as a result of the ever-increasingbandwidth demand.

Embodiments herein may reduce motherboard complexity while also reducingthe system footprint and removing the need for high-speed cablingexternal to the chassis. Embodiments may further reduce the length ofthe signal pathway while providing a higher-bandwidth interconnect.Specifically, embodiments may introduce within-chassis waveguidestructures or waveguide interconnects that enable ultra-high-speedsignal links between stacked platforms. In other words, embodiments mayrelate to three-dimensional (3D) links connecting stacked platforms. Asa result, the waveguides may provide higher bandwidth density and lowerlosses for the platform-to-platform interconnects than legacy electricaltraces. Use of the waveguide may also reduce the length of the signalpath and improve the electrical performance. Additionally, the use ofplatform-to-platform waveguide interconnects may reduce the systemfootprint by implementing a vertical waveguide structure closer to amicroelectronic package of the platform(s) than the legacythrough-chassis electrical routing.

FIG. 1 depicts an example electronic device with a plurality ofplatforms connected by a waveguide interconnect, in accordance withvarious embodiments. Specifically, FIG. 1 may depict an electronicdevice 100 that includes two platforms 105 a and 105 b (collectively,platforms 105). The platforms 105 may be considered to be in a “stacked”configuration. The platforms 105 a and 105 b may respectively includemicroelectronic packages 110 a and 110 b (collectively, microelectronicpackages 110). In some embodiments, the microelectronic packages 110 mayalso be referred to as semiconductor packages. It will be noted thateach and every element of FIG. 1 (and the subsequent FIGS. 2 to 6herein) may not be specifically notated, and this is done for the sakeof clarity and lack of unnecessary redundancy. It will be understood,however, that similar elements between the various FIGS. 1 to 6 , orwithin an individual FIGS. 1 to 6 , may share characteristics with oneanother unless otherwise stated.

Generally, the microelectronic packages 110 may include a die 115, atransceiver chip 125, and a package substrate 120. The packagesubstrates 120 may be cored or coreless. In various embodiments, thepackage substrates 120 may include one or more layers of an organic orinorganic dielectric material. The dielectric material may be, forexample, a build-up film made of silica-filled epoxy, low temperatureco-fired ceramic, glass or some other appropriate dielectric material.The package substrates 120 may also include one or more electricallyconductive elements such as traces, pads, vias, etc. that may routesignals from one area or element of the package substrate 120 toanother. Such a via may be via 130, which may communicatively couple anelement at one side of the package substrate 120 with another side ofthe package substrate 120. Generally, the via 130 may be a plated via, aplated via stack or some other type of via that allows for electricalcommunication between two elements. It will be understood that althoughonly a single via 130 is depicted as performing this function, in otherembodiments the coupling may include a plurality of vias, traces, etc.In various embodiments, the package substrates 120 may include one ormore active or passive elements either positioned within the packagesubstrates 120, or coupled to the package substrates 120. However, theseextra elements are not depicted in FIG. 1 for the sake of avoidance ofclutter of the Figure.

The dies 115 may include one or more active or passive elements. Theactive elements may be or include a singular or distributed processor,one or more cores of a distributed processor, a memory, etc. Theprocessor may be, for example, a central processing unit (CPU), agraphics processing unit (GPU), network controller or some other type ofprocessor. The memory may be, for example, a non-volatile memory (NVM),a dynamic random-access memory (DRAM), a double data rate (DDR) memory,etc. The passive element may include or be a resistor, a capacitor, aninductor, etc. In embodiments, the dies 115 of microelectronic packages110 a and 110 b may be the same sort of die as one another (e.g., bothmay be a processor, or a memory, or a passive component, etc.), whereasin other embodiments the die 115 of microelectronic package 110 a may bea different type of die than the die 115 of microelectronic package 110b.

The microelectronic packages 110 may also include one or moretransceivers 125. Generally, and as will be described in greater detailbelow, the transceivers 125 may be communicatively coupled with the dies115 by one or more conductive elements such as communication pathway170. As depicted, the communication pathway may be generally viewed asincluding two vias and a trace within the package substrate 120, howeverit will be understood that other embodiments may include a communicationpathway with more or fewer elements. The communication pathway mayinclude a transmission line designed to meet certain characteristicimpedance or to minimize the signal losses along the pathway. Theelements that make up the communication pathway 170 may include pads,traces, vias, microstrips, striplines, etc. that allow for electricalcommunication between two elements of the microelectronic package 110.

A transceiver 125 may be configured to receive an electronic signal fromthe die 115, and then modulate, up-convert, or otherwise alter theelectronic signal to a high-frequency electronic signal. Thehigh-frequency electronic signal may have a frequency on the order of ammWave-frequency, a THz-frequency, or higher. The transceiver 125 maythen output the high-frequency electronic signal. Additionally oralternatively, a transceiver 125 may be configured to receive ahigh-frequency electronic signal and then de-modulate, down-convert, orotherwise alter the high-frequency electronic signal to alower-frequency electronic signal which may then be output to a die 115.

Generally, the microelectronic packages 110 may include a number ofinterconnects 135 and 140. The interconnects 140 may physically andcommunicatively couple the dies 115 and the transceiver 125 to thepackage substrate 120. Similarly, the interconnects 135 may physicallyand communicatively couple the package substrate 120 to a printedcircuit board (PCB) 150 of the platform 105. As depicted, theinterconnects 135 and 140 may be solder bumps. For example, theinterconnects 135 and 140 may be solder balls of a ball grid array(BGA). In other embodiments one or both of the interconnects 135 and 140may be pins of a pin grid array (PGA), elements of a land grid array,etc. In some embodiments one or both of the interconnects 135 and 140may additionally or alternatively include a socket mechanism, a clampmechanism, etc. which may serve to physically couple two elements of themicroelectronic packages 110. As can be seen, in some embodiments theinterconnects 140 may be generally smaller than, and have a smallerpitch (i.e., the distance from the center of one interconnect 140 toanother interconnect 140) than interconnects 135. However, in otherembodiments the interconnects 140 may be a similar size to, or largerthan, interconnects 135. Similarly, interconnects 140 may have a pitchthat is similar to, or larger than, interconnects 135. Similarly,interconnects 140 may not be the same type as interconnects 135.Additionally, interconnects 140 coupled with die 115 may not be the samesize or type as the interconnects 135. Finally, the interconnects 140 orthe interconnects 135 of microelectronic package 110 a may not be thesame size or type as the interconnects 140 or 135 of microelectronicpackage 110 b.

The PCB 150 may include a material, combination of materials, orstructures similar to those of the package substrate 120. Specifically,the PCB 150 may be cored or coreless, include organic or inorganicmaterial, include additional passive or active elements, includeadditional conductive elements or communications pathways, etc.

The PCBs 150 may be coupled with a chassis 165. The chassis 165 may beformed of a rigid material such as steel, plastic, etc. Generally, thechassis 165 may give structure to the computing device and secure theplatforms 105 in a stacked configuration. The platforms 105 may connectto the chassis 165 via slots, sockets, or some other connection type. Insome embodiments, the chassis 165 may include cabling, a backplane, or amidplane to route signals or power to or from the platforms 105.

The PCBs 150 of the platforms 105 may be communicatively coupled withthe chassis 165 by waveguides 145. The waveguide 145 may include adielectric material or some other material that allows a high-frequencysignal to propagate from the interconnect 135 to the chassis 165 (orvice-versa). The waveguide 145 may be formed of a dielectric materialsuch as polytetrafluoroethylene (PTFE), polyethylene (PE), polystyrene,cyclic-olefin-copolymers (CoC), fluoropolymers such as fluorinatedethylene propylene (FEP), ethylene tetrafluoroethylene (ETFE),polyvinylidene fluoride (PVDF) or some other dielectric material thatmay allow for relatively efficient and low-loss propagation ofhigh-frequency electromagnetic signals. In some embodiments thewaveguide 145 may be formed of a dielectric material as core and anotherdielectric material as clad, whereas in other embodiments the waveguide145 may be metal-clad. In some embodiments, the waveguide 145 (or otherwaveguides herein) may be a low-dispersion waveguide such as a ridgewaveguide, an H-waveguide, or some other waveguide where at least aportion of the dielectric material has a graded or stepped index.

The waveguide 145 of the PCB 150 may be coupled with a connector 155 ofthe chassis 165. Although the connector 155 is depicted as a simplifiedrectangular element, the connector 155 may include one or moreelectrical sockets and may further include electrical circuitry.

The connectors 155 may be coupled with a second waveguide 160.Generally, the waveguide 160 may be a flexible waveguide cable. However,in other embodiments the waveguide 160 may be a rigid element thatcommunicatively couples the connectors 155. Additionally, although thewaveguide 160 is depicted in a location external to the chassis 165 andopposite the platforms 105, in other embodiments the waveguide 160 maybe internal to the chassis 165 or located in a different place thandepicted in FIG. 1 .

An example of the operation of the electronic device 100 may be asfollows. Generally, the die 115 of microelectronic package 100 a maygenerate a baseband signal, which may be communicated by communicationpathway 170 to the transceiver 125. The transceiver 125 may perform oneor more of the above-described operations to alter the baseband signaland produce a high-frequency signal. As used herein, “high-frequency”may refer to a signal with a frequency at or above approximately 20gigahertz (GHz). For example, the high-frequency signal may be amillimeter wave (mmWave) signal which may have a frequency betweenapproximately 20 GHz and approximately 300 GHz. Alternatively, thehigh-frequency signal may be referred to as a “terahertz (THz)-wavesignal” with a frequency above 300 GHz, for example on the order ofapproximately 1 THz. In some embodiments the high-frequency signal mayhave a frequency between approximately 100 GHz and approximately 200GHz.

The high-frequency signal may be transmitted from transceiver 125,through via 130, to waveguide 145 of the platform 105 a. The packagesubstrate 120 or the PCB 150 may include a signal launcher (not shown)which may alter the mode of the high-frequency signal from a modeappropriate for propagation through the microelectronic package 110 a toa mode appropriate for propagation through the waveguide 145. Thehigh-frequency signal may be conveyed along waveguide 145, throughconnector 155, and to waveguide 160. The high-frequency signal may thenbe conveyed through another connector 155 into the waveguide 145 ofplatform 105 b. The high-frequency signal may propagate tomicroelectronic package 110 b, and specifically transceiver 125 ofmicroelectronic package 110 b where it may be converted to a basebandsignal that is supplied to the die 115 of microelectronic package 110 b.

It will be understood that this description of FIG. 1 , and theoperation of FIG. 1 , is intended as one example of various embodiments.Other embodiments may include one or more variations. For example, someembodiments may include more or fewer elements (for example dies 115,platforms 105, microelectronic packages 110 on a given platform 105,number of interconnects, etc.) than depicted in FIG. 1 . Also, certainelements may have different shapes, sizes, or relative configurationsthan depicted in FIG. 1 . In some embodiments certain elements may havea different specific configuration. For example, the connectors 155 ofFIG. 1 or some other embodiment herein may include a connector elementon the waveguide (e.g., waveguide 145) and a connector element on thechassis 165 such that one connector element may be “plugged in” to theother. Other variations may be present. In some embodiments, one or bothof the microelectronic packages 110 may include an overmold material, aheatsink, and underfill material, or some other material which may notbe depicted in FIG. 1 but which may be present in variousmicroelectronic packages. Similar variations may be present in otherFigures discussed herein.

FIG. 2 depicts a simplified view of an alternative embodiment that has awaveguide assembly connecting two adjacent platforms. The waveguideassembly may include one or more in-board signal launchers, one or moreconnectors, and a waveguide. In some embodiments, the waveguide assemblymay be placed close to the edge of the microelectronic packages of theplatform to reduce the overall footprint of the platforms or theelectronic device.

Specifically, FIG. 2 depicts an alternative example electronic device200 with a plurality of platforms connected by a waveguide interconnect,in accordance with various embodiments. The electronic device 200 mayinclude platforms 205 a and 205 b (collectively platforms 205), whichmay be respectively similar to, and share one or more characteristicsof, platforms 105 a and 105 b as depicted in FIG. 1 . The platforms 205may include microelectronic packages 210 a and 210 b (collectivelymicroelectronic packages 210), which may be respectively similar to, andshare one or more characteristics of, microelectronic packages 110 a and110 b as depicted in FIG. 1 . The platforms 205 may further include PCBs250 and be coupled to a chassis 265, which may be respectively similarto, and share one or more characteristics of, PCBs 150 and chassis 165as depicted in FIG. 1 .

The electronic device may include a waveguide assembly 203 that bothphysically and communicatively couples platform 205 a with platform 205b. The waveguide assembly 203 may include signal launchers 207,connectors 209, and a waveguide 211.

The signal launchers 207 may be similar to the signal launcher describedabove with respect to FIG. 1 . Specifically, the signal launchers 207may alter a high-frequency signal from a mode appropriate to propagationthrough a microelectronic package 210 or a platform 205 to a modeappropriate to propagation through waveguide 211 (or vice-versa). Thesignal launcher 207 may include, for example, an antenna, opposing metalplates, a microstrip-to-tapered-slotline launcher, a leaky-wave planarlauncher, or some other type of signal launcher.

The connectors 209 may be, for example, a socket or some other type ofguide which may physically and communicatively couple the waveguide 211to the signal launcher 207. A connector 209 may be, for example, ahollow element designed to physically hold the waveguide 211 and thesignal launcher 207 in a specific relative configuration. In otherembodiments, a connector 209 may be or may include, for example,circuitry, lenses, etc. designed to affect the signal between the signallauncher 207 and the waveguide 211. In some embodiments, a connector 209and a signal launcher 207 may be at least partially the same element asone another. The signal launcher 207 may be communicatively coupled witha microelectronic package 210 by a waveguide 245, which may be similarto, and share one or more characteristics of, waveguide 145 (FIG. 1 ).

Similarly to waveguide 145 (FIG. 1 ) and 245, waveguide 211 may includePTFE, PE, polystyrene, CoC, FEP, ETFE, PVDF, or some other dielectricmaterial that may allow for relatively efficient and low-losspropagation of high-frequency electromagnetic signals such as thoseproduced by signal launchers 207. In some embodiments the waveguide 211may additionally or alternatively include a plug-on dielectric rod madeout of a material such as glass, ceramic, etc. In some embodiments thewaveguide 211 may be formed of the same material as waveguides 145 or245, whereas in other embodiments the waveguide 211 may be formed of adifferent material than waveguides 145 or 245. In some embodiments, thewaveguide 211 may be formed of a dielectric material without additionalcladding, whereas in other embodiments the waveguide 211 may bemetal-clad. In some embodiments the waveguide 211 may be alow-dispersion waveguide as described above. It will be understood thatalthough the waveguide 211 is depicted as a unitary element, in someembodiments the waveguide 211 may be replaced by a plurality ofwaveguides in parallel. In some embodiments, the waveguide 211 mayinclude a single waveguide channel which is able to carry a singlehigh-frequency signal between the platforms 205, whereas in otherembodiments the waveguide 211 may include a plurality of waveguidechannels that are able to simultaneously carry a plurality ofhigh-frequency signals between the platforms 205.

FIG. 3 depicts an alternative example electronic device 300 with aplurality of platforms connected by a waveguide interconnect, inaccordance with various embodiments. The electronic device 300 mayinclude platforms 305 a and 305 b (collectively platforms 305), whichmay be respectively similar to, and share one or more characteristicsof, platforms 105 a and 105 b as depicted in FIG. 1 . The platforms 305may include microelectronic packages 310 a and 310 b (collectivelymicroelectronic packages 310), which may be respectively similar to, andshare one or more characteristics of, microelectronic packages 110 a and110 b as depicted in FIG. 1 . The platforms 305 may further include PCBs350 and be coupled to a chassis 365, which may be respectively similarto, and share one or more characteristics of, PCBs 150 and chassis 165as depicted in FIG. 1 . The PCBs 350 may also include waveguides 345,which may be similar to, and share one or more characteristics of,waveguides 145 (FIG. 1 ) or 245 (FIG. 2 ).

Additionally, the electronic device 300 may include a waveguide assembly303, which may be similar to, and share one or more characteristics of,waveguide assembly 203 as depicted in FIG. 2 . Specifically, thewaveguide assembly 303 may include signal launchers 307, connectors 309,and waveguide 311, which may be respectively similar to, and share oneor more characteristics of, signal launchers 207, connectors 209, andwaveguides 211 as depicted in FIG. 2 .

However, as can be seen, the signal launcher 307 may be placed at alocation within the PCB 350 of platform 305 a that is different than thelocation of the signal launcher 207 in the PCB 250 of platform 205 a(FIG. 2 ). Specifically, the signal launcher 307 may not be directlyadjacent to the connector 309. In this embodiment, it may be desirableto include an on-platform waveguide 313. The on-platform waveguide 313may be formed of a material similar to those described above withrespect to waveguide 311, and be communicatively coupled to both signallauncher 307 of platform 305 a and waveguide 311. In some embodimentsthe on-platform waveguide 313 may be formed of a dielectric material ormaterials without metal cladding, whereas in other embodiments thewaveguide 313 may be metal-clad. In some embodiments, the on-platformwaveguide 313 may be manufactured as part of the manufacturing processof the PCB 350, whereas in other embodiments the on-platform waveguide313 may be inserted into a cavity of the PCB 350 subsequent tomanufacture of the PCB 350.

Some embodiments may relate to an electronic device with a plurality ofplatforms. In these embodiments, the waveguide assembly may go across aplurality of PCBs, and splitters may be introduced to couple the signalfrom within the waveguide assembly to individual platforms of theelectronic device. In these embodiments, the waveguide assembly maysupport data transfer rates on the order of tens to hundreds of gigabitsper second (Gbps), and multiple waveguide channels within the waveguideassembly may be used in parallel for board to board communication.

FIG. 4 depicts an alternative example electronic device 400 with aplurality of platforms connected by a waveguide interconnect, inaccordance with various embodiments. The electronic device 400 mayinclude microelectronic packages 410 a and 410 b, which may be similarto, and share one or more characteristics of, microelectronic packages210 a/310 a and 210 b/310 b as depicted in FIGS. 2 and 3 , respectively.The electronic device 400 may further include platforms 405 a and 405 b,which may be similar to, and share one or more characteristics of,platforms 205 a/305 a and 205 b/305 b as depicted in FIGS. 2 and 3 ,respectively. The electronic device 400 may further include a chassis465 which may be similar to, and share one or more characteristics of,chassis 265/365 as depicted in FIGS. 2 and 3 , respectively.

Additionally, the electronic device 400 may include a platform 405 cwith a microelectronic package 410 c. The platform 405 c may be similarto, and share one or more characteristics of, platforms 405 a or 405 b.The platforms 405 a, 405 b, and 405 c may be collectively referred toherein as platforms 405. Similarly, the microelectronic package 410 cmay be similar to, and share one or more characteristics of,microelectronic packages 410 a or 410 b. The microelectronic packages410 a, 410 b, and 410 c may be collectively referred to herein asmicroelectronic packages 410. As can be seen, the orientation of theplatform 405 c may differ from that of platforms 405 a and 405 b.Specifically, the platform 405 c, and the microelectronic package 410 c,may be considered to be “flipped” or “inverted” from that of platforms405 a and 405 b. The configuration of platforms 405 b and 405 c may bereferred to as a “back-to-back” configuration, whereas the configurationof platforms 405 a and 405 b may be referred to as a “back-to-face”configuration. It will, however, be understood that these configurationvariations are intended as non-limiting examples. In other embodimentsthe configuration of the platforms 405, or the platforms 105, 205, or305 as depicted in FIGS. 1, 2, and 3 , respectively, may be different inother embodiments and certain of the platforms may be arranged in aback-to-back, back-to-face, or a “face-to-face” configuration. Althoughnot explicitly depicted in FIG. 4 , the face-to-face configuration mayrefer to a configuration wherein the microelectronic packages of theplatforms are generally facing one another. The specific arrangement ofthe platforms or the microelectronic packages may be based on factorssuch as system design, manufacturing capabilities, other interconnects,material characteristics, or other factors.

The electronic device 400 may further include a waveguide assembly 403,which may be similar to, and share one or more characteristics of,waveguide assemblies 203 or 303 as depicted in FIGS. 2 and 3 ,respectively. Specifically, the waveguide assembly 403 may includesignal launchers 407, waveguides 411, on-platform waveguide 413, andconnectors 409, which may be respectively similar to, and share one ormore characteristics of, signal launchers 207/307, waveguides 211/311,on-platform waveguide 313, and connectors 209/309 as depicted in FIGS. 2and 3 , respectively.

The waveguide assembly 403, and specifically the waveguides 411 andon-platform waveguide 413, may include a plurality of waveguide channels419 a and 419 b (collectively waveguide channels 419). The waveguidechannels 419 may allow a high-frequency signal to propagate through thewaveguide assembly 403 between two components of the electrical device400. Generally, a waveguide channel 419 may be composed of a dielectricmaterial such as those described above with respect to waveguide 211(FIG. 2 ) embedded within a dielectric material that may not facilitatepropagation of the high-frequency signal. In this way, multiplewaveguide channels 419 may be present in parallel within a waveguideassembly 403 as shown in FIG. 4 .

Specifically, in some embodiments a waveguide channel such as waveguidechannel 419 a may provide communication between platforms 405 a and 405b. Another waveguide channel 419 may provide communication betweenplatforms 405 a and 405 c while passing through platform 405 b as shown.

The platform 405 b may include a splitter 417 which may serve as atermination for waveguide channel 419 a and allow for the signal to passbetween the waveguide channel 419 a and the platform 405 b. The splitter417 may, in some embodiments, be constructed similarly to, or includeelements similar to, signal launchers 407. Specifically, the splitter417 may allow for or facilitate conversion of the high-frequency signalbetween a mode appropriate for propagation through the waveguide channel419 a and a mode appropriate for propagation through the platform 405 b.

As previously noted, the above FIGS. 1-4 may be considered to beexamples of various embodiments. Other embodiments may include more orfewer elements than depicted, elements with a different size thandepicted, or elements in a different arrangement than depicted. Someembodiments may include combinations of aspects of the various Figures.Other variations may be present.

FIG. 5 depicts an example technique for manufacturing an electronicdevice with a plurality of platforms connected by a waveguideinterconnect, in accordance with various embodiments. An embodiment ofthe technique is described with respect to FIG. 5 , however it will beunderstood that the technique may be adapted, in whole or in part, withor without modification, to generate different electronic devices inaccordance with this disclosure.

The technique may include coupling, at 505, a first platform to achassis, wherein the first platform includes a first microelectronicpackage. The first platform may be similar to, for example, one ofplatforms 105, 205, 305, or 405 as depicted in FIGS. 1, 2, 3, and 4 ,respectively. The chassis may be similar to, for example, chassis 165,265, 365, or 465 as depicted in FIGS. 1, 2, 3, and 4 , respectively. Thefirst microelectronic package may be similar to, for example, one ofmicroelectronic packages 110, 210, 310, or 410 as depicted in FIGS. 1,2, 3, and 4 , respectively.

The technique may further include coupling, at 510, a second platform tothe chassis, wherein the second blade includes a second microelectronicpackage. The second platform may be similar to, for example, another oneof platforms 105, 205, 305, or 405. The second microelectronic packagemay be similar to, for example, another one of microelectronic packages110, 210, 310, or 410.

The technique may further include coupling, at 515, a first end of awaveguide to the first platform such that the first microelectronicpackage is communicatively coupled with the first end of the waveguide.The waveguide may be, for example, waveguide 160 or one of waveguideassemblies 203, 303, or 403 as depicted in FIGS. 2, 3, and 4 ,respectively.

The technique may further include coupling, at 520, a second end of thewaveguide to the second platform such that the second microelectronicpackage is communicatively coupled with the second end of the waveguide.As a result, the first microelectronic package may be communicativelycoupled with the second microelectronic package.

FIG. 6 illustrates an example computing device 1500 suitable for usewith various embodiments herein. As shown, computing device 1500 mayinclude one or more processors or processor cores 1502 and system memory1504. For the purpose of this application, including the claims, theterms “processor” and “processor cores” may be considered synonymous,unless the context clearly requires otherwise. The processor 1502 mayinclude any type of processors, such as a CPU, a microprocessor, and thelike. The processor 1502 may be implemented as an integrated circuithaving multi-cores, e.g., a multi-core microprocessor. The computingdevice 1500 may include mass storage devices 1506 (such as diskette,hard drive, volatile memory (e.g., DRAM, compact disc read-only memory(CD-ROM), digital versatile disk (DVD), and so forth)). In general,system memory 1504 and/or mass storage devices 1506 may be temporaland/or persistent storage of any type, including, but not limited to,volatile and non-volatile memory, optical, magnetic, and/or solid statemass storage, and so forth. Volatile memory may include, but is notlimited to, static and/or DRAM. Non-volatile memory may include, but isnot limited to, electrically erasable programmable read-only memory,phase change memory, resistive memory, and so forth. In someembodiments, one or both of the system memory 1504 or the mass storagedevice 1506 may include computational logic 1522, which may beconfigured to implement or perform, in whole or in part, one or moreinstructions that may be stored in the system memory 1504 or the massstorage device 1506. In other embodiments, the computational logic 1522may be configured to perform a memory-related command such as a read orwrite command on the system memory 1504 or the mass storage device 1506.

The computing device 1500 may further include input/output (I/O) devices1508 (such as a display (e.g., a touchscreen display), keyboard, cursorcontrol, remote control, gaming controller, image capture device, and soforth) and communication interfaces 1510 (such as network interfacecards, modems, infrared receivers, radio receivers (e.g., Bluetooth),and so forth).

The communication interfaces 1510 may include communication chips (notshown) that may be configured to operate the device 1500 in accordancewith a Global System for Mobile Communication (GSM), General PacketRadio Service (GPRS), Universal Mobile Telecommunications System (UMTS),High-Speed Packet Access (HSPA), Evolved HSPA (E-HSPA), or Long-TermEvolution (LTE) network. The communication chips may also be configuredto operate in accordance with Enhanced Data for GSM Evolution (EDGE),GSM EDGE Radio Access Network (GERAN), Universal Terrestrial RadioAccess Network (UTRAN), or Evolved UTRAN (E-UTRAN). The communicationchips may be configured to operate in accordance with Code DivisionMultiple Access (CDMA), Time Division Multiple Access (TDMA), DigitalEnhanced Cordless Telecommunications (DECT), Evolution-Data Optimized(EV-DO), derivatives thereof, as well as any other wireless protocolsthat are designated as 3G, 4G, 5G, and beyond. The communicationinterfaces 1510 may operate in accordance with other wireless protocolsin other embodiments.

The computing device 1500 may further include or be coupled with a powersupply. The power supply may, for example, be a power supply that isinternal to the computing device 1500 such as a battery. In otherembodiments the power supply may be external to the computing device1500. For example, the power supply may be an electrical source such asan electrical outlet, an external battery, or some other type of powersupply. The power supply may be, for example alternating current (AC),direct current (DC) or some other type of power supply. The power supplymay in some embodiments include one or more additional components suchas an AC to DC convertor, one or more downconverters, one or moreupconverters, transistors, resistors, capacitors, etc. that may be used,for example, to tune or alter the current or voltage of the power supplyfrom one level to another level. In some embodiments the power supplymay be configured to provide power to the computing device 1500 or oneor more discrete components of the computing device 1500 such as theprocessor(s) 1502, mass storage 1506, I/O devices 1508, etc.

The above-described computing device 1500 elements may be coupled toeach other via system bus 1512, which may represent one or more buses.In the case of multiple buses, the buses may be bridged by one or morebus bridges (not shown). Each of these elements may perform respectiveconventional functions known in the art. The various elements may beimplemented by assembler instructions supported by processor(s) 1502 orhigh-level languages that may be compiled into such instructions.

The permanent copy of the programming instructions may be placed intomass storage devices 1506 in the factory, or in the field, through, forexample, a distribution medium (not shown), such as a compact disc (CD),or through communication interface 1510 (from a distribution server (notshown)). That is, one or more distribution media having animplementation of the agent program may be employed to distribute theagent and to program various computing devices.

The number, capability, and/or capacity of the elements 1508, 1510, 1512may vary, depending on whether computing device 1500 is used as astationary computing device, such as a set-top box or desktop computer,or a mobile computing device, such as a tablet computing device, laptopcomputer, game console, or smartphone. Their constitutions are otherwiseknown, and accordingly will not be further described.

In various implementations, the computing device 1500 may comprise oneor more components of a data center, a laptop, a netbook, a notebook, anultrabook, a smartphone, a tablet, a personal digital assistant (PDA),an ultra mobile PC, a mobile phone, or a digital camera. In furtherimplementations, the computing device 1500 may be any other electronicdevice that processes data.

The computing device 1500 may be configured similarly to electronicdevices 100, 200, 300, and 400, as depicted in FIGS. 1, 2, 3, and 4 ,respectively. Specifically, the dies (e.g., dies 115 as depicted in FIG.1 ) of the various microelectronic packages 110, 210, 310, and 410, asdepicted in FIGS. 1, 2, 3, and 4 , respectively, may be a component suchas a processor 1502 or a memory 1504. The components may becommunicatively coupled with one another by a waveguide such aswaveguide 160 as depicted in FIG. 1 or one of waveguide assemblies 203,303, or 403 as depicted in FIGS. 2, 3 , and 4, respectively.

EXAMPLES OF VARIOUS EMBODIMENTS

Example 1 includes an electronic device comprising: a first platformcoupled with a chassis, wherein the first platform includes a firstmicroelectronic package; a second platform coupled with the chassis,wherein the second platform includes a second microelectronic package;and a waveguide positioned between, and coupled to, the first platformand the second platform such that the first microelectronic package iscommunicatively coupled with the second microelectronic package by thewaveguide.

Example 2 includes the electronic device of example 1, wherein the firstmicroelectronic package includes a processor die, a logic die, or amemory die that is communicatively coupled with the second platform bythe waveguide.

Example 3 includes the electronic device of example 1, wherein thewaveguide is a first waveguide, and wherein the first platform includesa second waveguide coupled with the first waveguide, wherein the secondwaveguide is communicatively positioned between the first waveguide andthe first microelectronic package.

Example 4 includes the electronic device of example 3, wherein the firstwaveguide and the second waveguide are parallel to one another.

Example 5 includes the electronic device of any of examples 1-4, whereinthe waveguide is a low-dispersion waveguide.

Example 6 includes the electronic device of any of examples 1-4, whereinthe first platform includes a signal launcher communicatively coupledwith the waveguide, wherein the signal launcher is to convert a signalreceived from the waveguide from a mode related to propagation throughthe waveguide to a mode related to propagation through the firstmicroelectronic package.

Example 7 includes the electronic device of example 6, wherein the firstplatform includes a connector that physically and communicativelycouples the signal launcher with the waveguide.

Example 8 includes the electronic device of any of examples 1-4, whereinthe first microelectronic package includes a transceiver that is toconvert a baseband signal to a high-frequency signal, and wherein thetransceiver is further to transmit the high-frequency signal to thewaveguide.

Example 9 includes the electronic device of example 8, wherein thehigh-frequency signal has a frequency of at least 20 gigahertz (GHz).

Example 10 includes the electronic device of example 8, wherein thehigh-frequency signal has a frequency of between 80 gigahertz (GHz) and220 GHz.

Example 11 includes a computing device comprising: a first printedcircuit board (PCB) coupled with a chassis, wherein the first PCBincludes a first microelectronic package; a second PCB coupled with thechassis, wherein the second PCB includes a second microelectronicpackage; a third PCB coupled with the chassis such that the second PCBis physically between the first PCB and the third PCB, wherein the thirdPCB includes a third microelectronic package; and a waveguide coupledwith the first PCB, the second PCB, and the third PCB, wherein thewaveguide communicatively couples the first microelectronic package, thesecond microelectronic package, and the third microelectronic package.

Example 12 includes the computing device of example 11, wherein thewaveguide can support a data rate of at least 10 gigabits per second(Gbps).

Example 13 includes the computing device of example 12, wherein thewaveguide can support a data rate of at least 100 Gbps.

Example 14 includes the computing device of example 11, wherein thewaveguide includes a splitter coupled with the second PCB, wherein thesplitter communicatively couples the waveguide with the secondmicroelectronic package.

Example 15 includes the computing device of example 11, wherein thewaveguide includes a plurality of waveguide channels.

Example 16 includes the computing device of any of examples 11-15,wherein the first PCB and the second PCB are arranged face-to-face.

Example 17 includes the computing device of any of examples 11-15,wherein the first PCB and the second PCB are arranged back-to-face.

Example 18 includes the computing device of any of examples 11-15,wherein the first PCB and the second PCB are arranged back-to-back.

Example 19 includes a method of manufacturing a rack server with aplurality of server blades, the method comprising: coupling a firstserver blade to a chassis, wherein the first server blade includes afirst microelectronic package; coupling a second server blade to thechassis, wherein the second server blade includes a secondmicroelectronic package; coupling a first end of a waveguide to thefirst server blade such that the first microelectronic package iscommunicatively coupled with the first end of the waveguide; andcoupling a second end of the waveguide to the second server blade suchthat the second microelectronic package is communicatively coupled withthe second end of the waveguide.

Example 20 includes the method of example 19, wherein the waveguide isto convey an electromagnetic signal with a frequency of at least 20gigahertz (GHz) between the first blade and the second blade.

Example 21 includes the method of example 19, wherein, once the firstserver blade and the second server blade are coupled with the waveguide,the first microelectronic package is communicatively coupled with thesecond microelectronic package.

Example 22 includes the method of any of examples 19-21, wherein thewaveguide is coupled with the chassis, and wherein coupling the firstserver blade with the first end of the waveguide includes coupling thefirst server blade with a connector positioned on the chassis.

Example 23 includes the method of any of examples 19-21, whereincoupling the first server blade to the first end of the waveguideincludes coupling the waveguide with a connector positioned on the firstserver blade.

Example 24 includes the method of any of examples 19-21, wherein themethod further comprises: coupling a third server blade to the chassissuch that the third server blade is positioned between the first serverblade and the second server blade, wherein the third server bladeincludes a third microelectronic package; and communicatively couplingthe third microelectronic package with a splitter of the waveguide suchthat the third microelectronic package is communicatively coupled withthe first microelectronic package by the waveguide.

Example 25 includes a computing device comprising: a chassis with awaveguide coupled thereto; a first server blade coupled with thechassis, wherein the first server blade includes a first microelectronicpackage that is communicatively coupled with the waveguide; and a secondserver blade coupled with the chassis, wherein the second server bladeincludes a second microelectronic package that is communicativelycoupled with the waveguide such that the first microelectronic packageand the second microelectronic package are communicatively coupled withone another by the waveguide.

Example 26 includes the computing device of example 25, wherein thefirst microelectronic package includes a processor die, a logic die, ora memory die that is communicatively coupled with the second serverblade by the waveguide.

Example 27 includes the computing device of example 25, wherein thewaveguide is a first waveguide, and wherein the first server bladeincludes a second waveguide that communicatively couples the firstwaveguide and the first microelectronic package.

Example 28 includes the computing device of example 27, wherein thefirst server blades includes a signal launcher coupled with the secondwaveguide, wherein the signal launcher is to convert a signal from amode related to propagation through the first microelectronic package toa mode related to propagation through the second waveguide.

Example 29 includes the computing device of any of examples 25-28,wherein the waveguide is a flexible waveguide cable.

Example 30 includes the computing device of any of examples 25-28,wherein the first microelectronic package is to transmit a signal to thesecond microelectronic package via the waveguide, and wherein the signalhas a frequency of at least 20 gigahertz (GHz).

Example 31 includes the computing device of example 30, wherein thesignal has a frequency between 100 GHz and 200 GHz.

Various embodiments may include any suitable combination of theabove-described embodiments including alternative (or) embodiments ofembodiments that are described in conjunctive form (and) above (e.g.,the “and” may be “and/or”). Furthermore, some embodiments may includeone or more articles of manufacture (e.g., non-transitorycomputer-readable media) having instructions, stored thereon, that whenexecuted result in actions of any of the above-described embodiments.Moreover, some embodiments may include apparatuses or systems having anysuitable means for carrying out the various operations of theabove-described embodiments.

The above description of illustrated embodiments, including what isdescribed in the Abstract, is not intended to be exhaustive or limitingas to the precise forms disclosed. While specific implementations of,and examples for, various embodiments or concepts are described hereinfor illustrative purposes, various equivalent modifications may bepossible, as those skilled in the relevant art will recognize. Thesemodifications may be made in light of the above detailed description,the Abstract, the Figures, or the claims.

1. A computing device, comprising: a chassis; a first server bladecoupled with the chassis at a first vertical location, wherein the firstserver blade includes a first microelectronic package and a firstwaveguide communicatively coupled with the first microelectronicpackage; a second server blade coupled with the chassis at a secondvertical location below the first vertical location, wherein the secondserver blade includes a second microelectronic package and a secondwaveguide communicatively coupled with the second microelectronicpackage; and a third waveguide communicatively coupled to the firstwaveguide and the second waveguide, wherein the first microelectronicpackage is communicatively coupled with a first end of the thirdwaveguide by the first waveguide, the second microelectronic package iscommunicatively coupled with a second end of the third waveguide by thesecond waveguide, and at least a portion of the third waveguide isoriented vertically between the first server blade and the second serverblade.
 2. The computing device of claim 1, wherein the third waveguideis configured to convey an electromagnetic signal with a frequency of atleast 20 gigahertz (GHz).
 3. The computing device of claim 1, whereinthe third waveguide is configured to convey an electromagnetic signalwith a frequency of at least 100 GHz and 200 GHz.
 4. The computingdevice of claim 1, wherein the first microelectronic package includes aprocessor die, a logic die, or a memory die that is communicativelycoupled with the second microelectronic package by the first, second,and third waveguides.
 5. The computing device of claim 1, wherein thethird waveguide is a flexible waveguide cable.
 6. The computing deviceof claim 1, wherein the first microelectronic package is communicativelycoupled with the second microelectronic package by the first waveguide,the second waveguide, and the third waveguide.
 7. The computing deviceof claim 1, wherein the first waveguide is coupled with the first end ofthe third waveguide by a connector positioned on the chassis.
 8. Thecomputing device of claim 1, wherein the first waveguide is coupled withthe first end of the third waveguide by a connector positioned on thefirst server blade.
 9. The computing device of claim 1, furthercomprising: a third server blade coupled with the chassis at a thirdvertical location on the chassis between the first vertical location andthe second vertical location, wherein the third server blade includes athird microelectronic package and a fourth waveguide communicativelycoupled with the third microelectronic package, the fourth waveguide iscommunicatively coupled with a splitter of the third waveguide, and thethird microelectronic package is communicatively coupled with the firstmicroelectronic package by the first, third, and fourth waveguides. 10.A method of manufacturing an electronic device with a plurality ofplatforms, the method comprising: coupling a first platform to avertical location on a chassis, wherein the first platform includes afirst microelectronic package and a first waveguide communicativelycoupled with the first microelectronic package; coupling a secondplatform to a location on the chassis below the first platform, whereinthe second platform includes a second microelectronic package and asecond waveguide communicatively coupled with the second microelectronicpackage; communicatively coupling a first end of a third waveguide tothe first waveguide such that the first microelectronic package iscommunicatively coupled with the first end of the third waveguide by thefirst waveguide; and communicatively coupling a second end of the thirdwaveguide to the second waveguide such that the second microelectronicpackage is communicatively coupled with the second end of the thirdwaveguide by the second waveguide, wherein at least a portion of thethird waveguide is oriented vertically between the first platform andthe second platform.
 11. The method of claim 10, wherein the firstmicroelectronic package is communicatively coupled with the secondmicroelectronic package by the first waveguide, the second waveguide,and the third waveguide.
 12. The method of claim 10, wherein the firstmicroelectronic package includes a processor die, a logic die, or amemory die that is communicatively coupled with the secondmicroelectronic package by the first, second, and third waveguides. 13.The method of claim 10, wherein the first, second, and third waveguidesare low-dispersion waveguides
 14. The method of claim 10, wherein thefirst platform includes a signal launcher communicatively coupled withthe first waveguide and the third waveguide, wherein the signal launcheris configured to convert a signal from a mode related to propagationthrough the first waveguide to a mode related to propagation through thethird waveguide.
 15. The method of claim 10, wherein the firstmicroelectronic package further includes a transceiver that isconfigured to convert a baseband signal to a high-frequency signal, andwherein the transceiver is further configured to transmit thehigh-frequency signal to the first waveguide.
 16. The method of claim15, wherein the high-frequency signal has a frequency of at least 20gigahertz (GHz).
 17. The method of claim 15, wherein the high-frequencysignal has a frequency of between 80 gigahertz (GHz) and 220 GHz. 18.The method of claim 10, wherein the third waveguide is coupled withinthe chassis, and wherein coupling the first waveguide with the first endof the third waveguide includes coupling the first waveguide with aconnector positioned on the chassis.
 19. The method of claim 10, whereinthe first platform is a first printed circuit board (PCB) and the secondplatform is a second PCB.
 20. The method of claim 10, furthercomprising: coupling a third platform to a location on the chassis suchthat the third platform is positioned between the first platform and thesecond platform, wherein the third platform includes a thirdmicroelectronic package and a fourth waveguide communicatively coupledwith the third microelectronic package; and communicatively coupling thefourth waveguide with a splitter of the third waveguide such that thethird microelectronic package is communicatively coupled with the firstmicroelectronic package by the first, third, and fourth waveguides.